Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5...

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Bibliographic Details
Published in:Physical review. Accelerators and beams 2016-07, Vol.19 (7), p.071001, Article 071001
Main Authors: Wistisen, T. N., Uggerhøj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. C., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., Tucker, S.
Format: Article
Language:English
Subjects:
Angle of reflection
ATOMIC AND MOLECULAR PHYSICS
Bend radius
Channeling
Crystals
Mathematical analysis
Orthogonality
Process parameters
Silicon
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Summary:We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.
ISSN:2469-9888
2469-9888
DOI:10.1103/PhysRevAccelBeams.19.071001