Band structure and optical properties of antimony-sulfobromide: density functional calculation

• Published in: Central European journal of physics 2008-03, Vol.6 (1), p.64-75
• Main Authors: Akkus, Harun, Mamedov, Amirullah M., Kazempour, Ali, Akbarzadeh, Hadi
• Format: Article
• Language: English
• Subjects: 71.15.Mb; 71.20.-b; 71.20.Nr; 77.22.Ch; 77.22.Gm; Biological and Medical Physics; Biophysics; electronic structure; Environmental Physics; ferroelectric semiconductor; Geophysics/Geodesy; optical properties; Physical Chemistry; Physics; Physics and Astronomy; Research Article; SbSBr
• ISSN: 1895-1082; 2391-5471; 1644-3608; 2391-5471
• DOI: 10.2478/s11534-008-0028-y

The electronic structure, linear, and non-linear optical properties of ferroelectric-semiconductor SbSBr are investigated in the non-polar (paraelectric) and polar (ferroelectric) phase, using the density functional methods in the generalized gradient approximation. The electronic band structure obtained shows that SbSBr has an indirect forbidden gap of 2.16 and 2.21 eV in the paraelectric and ferroelectric phase, respectively. The linear photon-energy dependent dielectric functions and some optical functions, such as absorption and extinction coefficients, refractive index, energy-loss function, reflectivity, and optical conductivity in both phases and photon-energy dependent second-order susceptibilities in the ferroelectric phase are calculated. Moreover, some important optical parameters, such as the effective number of valence electrons and the effective optical dielectric constant, are calculated in both phases.