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Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V ), silicon and carbon divacancies (V V ), and nitrogen vacancies (N V ) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca....
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| Published in: | Beilstein journal of nanotechnology 2019, Vol.10 (1), p.2383-2395 |
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| creator | Castelletto, Stefania Al Atem, Abdul Salam Inam, Faraz Ahmed von Bardeleben, Hans Jürgen Hameau, Sophie Almutairi, Ahmed Fahad Guillot, Gérard Sato, Shin-Ichiro Boretti, Alberto Bluet, Jean Marie |
| description | We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V
), silicon and carbon divacancies (V
V
), and nitrogen vacancies (N
V
) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H
ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of V
measuring an enhancement by up to a factor of 20, and of N
V
with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of V
and N
V
for in vivo imaging and sensing in the infrared. |
| doi_str_mv | 10.3762/bjnano.10.229 |
| format | article |
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), silicon and carbon divacancies (V
V
), and nitrogen vacancies (N
V
) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H
ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of V
measuring an enhancement by up to a factor of 20, and of N
V
with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of V
and N
V
for in vivo imaging and sensing in the infrared.</description><identifier>ISSN: 2190-4286</identifier><identifier>EISSN: 2190-4286</identifier><identifier>DOI: 10.3762/bjnano.10.229</identifier><identifier>PMID: 31886115</identifier><language>eng</language><publisher>Germany: Beilstein-Institut zur Föerderung der Chemischen Wissenschaften</publisher><subject>Arrays ; Color centers ; Computer simulation ; Diameters ; Divacancies ; Efficiency ; Emission ; Engineering Sciences ; Finite element method ; Fluorescence ; Full Research Paper ; Interfaces ; Magnetic fields ; Micro and nanotechnologies ; Microelectronics ; micropillars ; Nanoscience ; Nanotechnology ; Photoluminescence ; Photonics ; Point defects ; proton irradiation ; Quantum dots ; quantum sensing ; Silicon carbide ; Surgical implants ; Vacancies ; vacancy</subject><ispartof>Beilstein journal of nanotechnology, 2019, Vol.10 (1), p.2383-2395</ispartof><rights>Copyright © 2019, Castelletto et al.; licensee Beilstein-Institut.</rights><rights>Copyright © 2019, Castelletto et al.; licensee Beilstein-Institut. This work is published under http://creativecommons.org/licenses/by/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><rights>Copyright © 2019, Castelletto et al. 2019 Castelletto et al.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c625t-952db35e9ac09e1760f270ec8be712ffb6b8e68a71373bc8c4aeab712c185ef03</citedby><cites>FETCH-LOGICAL-c625t-952db35e9ac09e1760f270ec8be712ffb6b8e68a71373bc8c4aeab712c185ef03</cites><orcidid>0000-0001-9359-9400 ; 0000-0002-8675-2291 ; 0000-0002-4421-3628 ; 0000-0002-3374-0238 ; 0000-0002-1672-6725</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2331548530/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2331548530?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,4024,25753,27923,27924,27925,37012,37013,44590,53791,53793,75126</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/31886115$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-02492295$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Castelletto, Stefania</creatorcontrib><creatorcontrib>Al Atem, Abdul Salam</creatorcontrib><creatorcontrib>Inam, Faraz Ahmed</creatorcontrib><creatorcontrib>von Bardeleben, Hans Jürgen</creatorcontrib><creatorcontrib>Hameau, Sophie</creatorcontrib><creatorcontrib>Almutairi, Ahmed Fahad</creatorcontrib><creatorcontrib>Guillot, Gérard</creatorcontrib><creatorcontrib>Sato, Shin-Ichiro</creatorcontrib><creatorcontrib>Boretti, Alberto</creatorcontrib><creatorcontrib>Bluet, Jean Marie</creatorcontrib><title>Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars</title><title>Beilstein journal of nanotechnology</title><addtitle>Beilstein J Nanotechnol</addtitle><description>We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V
), silicon and carbon divacancies (V
V
), and nitrogen vacancies (N
V
) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H
ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of V
measuring an enhancement by up to a factor of 20, and of N
V
with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of V
and N
V
for in vivo imaging and sensing in the infrared.</description><subject>Arrays</subject><subject>Color centers</subject><subject>Computer simulation</subject><subject>Diameters</subject><subject>Divacancies</subject><subject>Efficiency</subject><subject>Emission</subject><subject>Engineering Sciences</subject><subject>Finite element method</subject><subject>Fluorescence</subject><subject>Full Research Paper</subject><subject>Interfaces</subject><subject>Magnetic fields</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>micropillars</subject><subject>Nanoscience</subject><subject>Nanotechnology</subject><subject>Photoluminescence</subject><subject>Photonics</subject><subject>Point defects</subject><subject>proton irradiation</subject><subject>Quantum dots</subject><subject>quantum sensing</subject><subject>Silicon carbide</subject><subject>Surgical implants</subject><subject>Vacancies</subject><subject>vacancy</subject><issn>2190-4286</issn><issn>2190-4286</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNpdUk1v3CAQtapWTZTm2GtlqZf24JQPg-FSKUo_EmmlXtozGvB4l5UNW_BGyr8vjtMoCQdghjePmTdTVe8pueCdZF_sPkCIF8VkTL-qThnVpGmZkq-f3E-q85z3pKyWMKXV2-qEU6UkpeK0mr7hjGnywefZu_owgsMJw1zHoT6Oc4LGJr_dzXVASI0PQ4KEfe3iGFPtChBTrn2oISW4y0tU9qN3MdQOkvU91pN3KR78OELK76o3A4wZzx_Os-rPj--_r66bza-fN1eXm8ZJJuZGC9ZbLlCDIxppJ8nAOoJOWewoGwYrrUKpoKO849Yp1wKCLU-OKoED4WfVzcrbR9ibQ_ITpDsTwZt7R0xbA6nUO6IhwwA9ghBEy1ZoW3btOHcdp1pL6ArX15XrcLQT9kvNCcZnpM9fgt-Zbbw1Uhe5FSsEn1eC3Yuw68uNWXyEtbr0T9zSgv308FmKf4-YZzP57LCIFzAes2Gc05aJTiy0H19A9_GYQpH1HiVaJfiiRLOiShNyTjg8ZkCJWWbIrDO0mCWHgv_wtNpH9P-J4f8A9mLETQ</recordid><startdate>2019</startdate><enddate>2019</enddate><creator>Castelletto, Stefania</creator><creator>Al Atem, Abdul Salam</creator><creator>Inam, Faraz Ahmed</creator><creator>von Bardeleben, Hans Jürgen</creator><creator>Hameau, Sophie</creator><creator>Almutairi, Ahmed Fahad</creator><creator>Guillot, Gérard</creator><creator>Sato, Shin-Ichiro</creator><creator>Boretti, Alberto</creator><creator>Bluet, Jean Marie</creator><general>Beilstein-Institut zur Föerderung der Chemischen Wissenschaften</general><general>Karlsruhe Institute of Technology</general><general>Beilstein-Institut</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BFMQW</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>M2P</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><scope>7X8</scope><scope>1XC</scope><scope>VOOES</scope><scope>5PM</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-9359-9400</orcidid><orcidid>https://orcid.org/0000-0002-8675-2291</orcidid><orcidid>https://orcid.org/0000-0002-4421-3628</orcidid><orcidid>https://orcid.org/0000-0002-3374-0238</orcidid><orcidid>https://orcid.org/0000-0002-1672-6725</orcidid></search><sort><creationdate>2019</creationdate><title>Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars</title><author>Castelletto, Stefania ; Al Atem, Abdul Salam ; Inam, Faraz Ahmed ; von Bardeleben, Hans Jürgen ; Hameau, Sophie ; Almutairi, Ahmed Fahad ; Guillot, Gérard ; Sato, Shin-Ichiro ; Boretti, Alberto ; Bluet, Jean Marie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c625t-952db35e9ac09e1760f270ec8be712ffb6b8e68a71373bc8c4aeab712c185ef03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Arrays</topic><topic>Color centers</topic><topic>Computer simulation</topic><topic>Diameters</topic><topic>Divacancies</topic><topic>Efficiency</topic><topic>Emission</topic><topic>Engineering Sciences</topic><topic>Finite element method</topic><topic>Fluorescence</topic><topic>Full Research Paper</topic><topic>Interfaces</topic><topic>Magnetic fields</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>micropillars</topic><topic>Nanoscience</topic><topic>Nanotechnology</topic><topic>Photoluminescence</topic><topic>Photonics</topic><topic>Point defects</topic><topic>proton irradiation</topic><topic>Quantum dots</topic><topic>quantum sensing</topic><topic>Silicon carbide</topic><topic>Surgical implants</topic><topic>Vacancies</topic><topic>vacancy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Castelletto, Stefania</creatorcontrib><creatorcontrib>Al Atem, Abdul Salam</creatorcontrib><creatorcontrib>Inam, Faraz Ahmed</creatorcontrib><creatorcontrib>von Bardeleben, Hans Jürgen</creatorcontrib><creatorcontrib>Hameau, Sophie</creatorcontrib><creatorcontrib>Almutairi, Ahmed Fahad</creatorcontrib><creatorcontrib>Guillot, Gérard</creatorcontrib><creatorcontrib>Sato, Shin-Ichiro</creatorcontrib><creatorcontrib>Boretti, Alberto</creatorcontrib><creatorcontrib>Bluet, Jean Marie</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Continental Europe Database</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Science Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>PubMed Central (Full Participant titles)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Beilstein journal of nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Castelletto, Stefania</au><au>Al Atem, Abdul Salam</au><au>Inam, Faraz Ahmed</au><au>von Bardeleben, Hans Jürgen</au><au>Hameau, Sophie</au><au>Almutairi, Ahmed Fahad</au><au>Guillot, Gérard</au><au>Sato, Shin-Ichiro</au><au>Boretti, Alberto</au><au>Bluet, Jean Marie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars</atitle><jtitle>Beilstein journal of nanotechnology</jtitle><addtitle>Beilstein J Nanotechnol</addtitle><date>2019</date><risdate>2019</risdate><volume>10</volume><issue>1</issue><spage>2383</spage><epage>2395</epage><pages>2383-2395</pages><issn>2190-4286</issn><eissn>2190-4286</eissn><abstract>We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V
), silicon and carbon divacancies (V
V
), and nitrogen vacancies (N
V
) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H
ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of V
measuring an enhancement by up to a factor of 20, and of N
V
with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of V
and N
V
for in vivo imaging and sensing in the infrared.</abstract><cop>Germany</cop><pub>Beilstein-Institut zur Föerderung der Chemischen Wissenschaften</pub><pmid>31886115</pmid><doi>10.3762/bjnano.10.229</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0001-9359-9400</orcidid><orcidid>https://orcid.org/0000-0002-8675-2291</orcidid><orcidid>https://orcid.org/0000-0002-4421-3628</orcidid><orcidid>https://orcid.org/0000-0002-3374-0238</orcidid><orcidid>https://orcid.org/0000-0002-1672-6725</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | Publicly Available Content Database; PubMed Central; Free Full-Text Journals in Chemistry |
| subjects | Arrays Color centers Computer simulation Diameters Divacancies Efficiency Emission Engineering Sciences Finite element method Fluorescence Full Research Paper Interfaces Magnetic fields Micro and nanotechnologies Microelectronics micropillars Nanoscience Nanotechnology Photoluminescence Photonics Point defects proton irradiation Quantum dots quantum sensing Silicon carbide Surgical implants Vacancies vacancy |
| title | Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars |
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