Improved Model of TiO2 Memristor

Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approxim...

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Published in:Radioengineering 2015-06, Vol.24 (2), p.378-383
Main Authors: Biolek, Z., Biolek, D., Biolkova, V.
Format: Article
Language:English
Subjects:
Pickett’s model
Port Equation
simulation
State Equation
TiO2 memristor
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Biolek, D.
Biolkova, V.
description Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
doi_str_mv 10.13164/re.2015.0378
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subjects Pickett’s model
Port Equation
simulation
State Equation
TiO2 memristor
title Improved Model of TiO2 Memristor
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