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Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials
In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low- ) materials have been investigated in terms of metal gate area and geometry and thickness of dielectric film effects. Two low- materials, dense and porous low...
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Published in: | Molecules (Basel, Switzerland) Switzerland), 2023-01, Vol.28 (3), p.1134 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low-
) materials have been investigated in terms of metal gate area and geometry and thickness of dielectric film effects. Two low-
materials, dense and porous low-
films, were used. Experimental results indicated that the porous low-
films had shorter breakdown times, lower Weibull slope parameters and electric field acceleration factors, and weaker thickness-dependence breakdowns compared to the dense low-
films. Additionally, a larger derivation in dielectric breakdown projection model and a single Weilbull plot of the breakdown time distributions from various areas merging was observed. This study also pointed out that the porous low-
film in the irregular-shaped metal gate MIS capacitor had a larger dielectric breakdown time than that in the square- and circle-shaped samples, which violates the trend of the sustained electric field. As a result, another breakdown mechanism exists in the irregular-shaped sample, which is required to explore in the future work. |
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ISSN: | 1420-3049 1420-3049 |
DOI: | 10.3390/molecules28031134 |