Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate

In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method mak...

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Bibliographic Details
Published in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2018-12, Vol.21 (4), p.360-364
Main Author: Bacherikov, Yu.Yu
Format: Article
Language:English
Subjects:
interface
porous layer
rapid thermal annealing
SiC substrates
thin dysprosium oxide films
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Summary:In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of film-substrate interface and increasing the optical transmission of Dy 2 O 3 /por-SiC/SiC structure.
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo21.04.360