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Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement
Abstract High-quality VO $$_2$$ 2 films were fabricated on top of c-Al $$_2$$ 2 O $$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO $$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 1...
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Published in: | Scientific reports 2024-02, Vol.14 (1), p.1-9 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | Abstract High-quality VO $$_2$$ 2 films were fabricated on top of c-Al $$_2$$ 2 O $$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO $$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 100 nm VO $$_2$$ 2 . The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO $$_2$$ 2 , to avoid the strain effect from lattice mismatch and to study how VO $$_2$$ 2 can affect the graphene layer. Slight increases in graphene/VO $$_2$$ 2 T $$_\text {MIT}$$ MIT compared to pure VO $$_2$$ 2 by $$\sim$$ ∼ 1.9 $$^{\circ }$$ ∘ C and $$\sim$$ ∼ 3.8 $$^{\circ }$$ ∘ C for CVD graphene on 100 and 50 nm VO $$_2$$ 2 , respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T $$_\text {MIT}$$ MIT may originate from a large difference in the thermal conductivity between graphene and VO $$_2$$ 2 . Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G $$^{+}$$ + and G $$^{-}$$ - , were observed on graphene/VO $$_2$$ 2 (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO $$_2$$ 2 phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm $$^{-1}$$ - 1 at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO $$_2$$ 2 samples. Other electronic interactions between graphene and VO $$_2$$ 2 are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO $$_2$$ 2 and introduce some new applications that utilize the controllable structural properties of graphene via the VO $$_2$$ 2 phase transition. |
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ISSN: | 2045-2322 |
DOI: | 10.1038/s41598-024-54844-w |