Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated anneal...

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Bibliographic Details
Published in:Applied sciences 2018-01, Vol.8 (1), p.10
Main Authors: Hallam, Brett, Herguth, Axel, Hamer, Phillip, Nampalli, Nitin, Wilking, Svenja, Abbott, Malcolm, Wenham, Stuart, Hahn, Giso
Format: Article
Language:English
Subjects:
Boron
boron-oxygen
Defect annealing
Degradation
Fabrication
hydrogen passivation
Hydrogen storage
Light
light-induced degradation
Mitigation
p-type Czochralski
Photodegradation
Photovoltaic cells
Photovoltaics
regeneration
Silicon
silicon solar cell
Silicon wafers
Solar cells
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Summary:This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.
ISSN:2076-3417
2076-3417
DOI:10.3390/app8010010