Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors

Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages...

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Bibliographic Details
Published in:AIP advances 2015-02, Vol.5 (2), p.027127-027127-7
Main Authors: Zhang, Y., Mou, N. I., Pai, P., Tabib-Azar, M.
Format: Article
Language:English
Subjects:
Deformation effects
Deformation mechanisms
Electric potential
Filaments
Memristors
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Summary:Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu2-αS memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4913372