A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

• Published in: Discover nano 2023-07, Vol.18 (1), p.96-96, Article 96
• Main Authors: Lin, Jyi-Tsong, Weng, Shao-Cheng
• Format: Article
• Language: English
• Subjects: Annealing; Band-to-band tunneling (BTBT); Calibration; Chemistry and Materials Science; Control gate (CG); Doping; energy; Energy bands; Fabrication; Field effect transistors; Internet of Things; Ion implantation; Leakage; Leakage current; Line tunneling; Materials Science; Molecular Medicine; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; P-n junctions; Power consumption; probability; Schottky contact; Semiconductor devices; Silicon germanides; Simulation; Subthreshold swing; transistors; Tunnel FET (TFET); Tunneling; Work functions
• ISSN: 2731-9229; 1931-7573; 2731-9229; 1556-276X
• DOI: 10.1186/s11671-023-03875-9

This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given a sufficient negative bias, the overlap of the energy bands at the drain in the OFF-state is effectively suppressed, thus reducing the tunneling probability and significantly decreasing leakage current. Additionally, the large overlap area between the source and gate improves the gate’s ability to control the tunneling interface effectively, improving the ON-state current and subthreshold swing characteristics. By using the Schottky contact characteristics of a metal–semiconductor contact with different work functions to form a PN junction, the need to control doping profiles or random doping fluctuations is avoided. Furthermore, as ion implantation is not required, issues related to subsequent annealing are also eliminated, greatly reducing thermal budget. Due to the different material bandgap characteristics selected for the source and drain regions, the probability of overlap of the energy bands in the source region in the ON-state is increased and that in the drain region in the OFF-state is reduced. Based on the feasibility of the actual fabrication process and through rigorous 2D simulation studies, improvements in subthreshold swing and high on/off current ratio can be achieved simultaneously based on the proposed device structure. Additionally, the presence of the control gate structure effectively suppresses leakage current, further enhancing its potential for low-power-consumption applications.