Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure t...

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Bibliographic Details
Published in:Micromachines (Basel) 2023-03, Vol.14 (3), p.602
Main Authors: Liu, Rui, Gao, Linchun, Wang, Juanjuan, Ni, Tao, Li, Yifan, Wang, Runjian, Li, Duoli, Bu, Jianhui, Zeng, Chuanbin, Li, Bo, Luo, Jiajun
Format: Article
Language:English
Subjects:
border trap
Density
Design and construction
Integrated circuit fabrication
ionizing radiation
Irradiation
LF noise
low-frequency noise
Materials
Metal oxide semiconductor field effect transistors
Methods
MOSFET
MOSFETs
Noise measurement
partially depleted silicon-on-insulator (PDSOI)
Radiation
Radiation dosage
radiation effects
Random walk theory
Signal processing
Silicon dioxide
SOI (semiconductors)
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Summary:In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure the DC electrical characteristics of the devices at different irradiation doses and separate the threshold-voltage shifts caused by the oxide-trap charge and interface-trap charge. Moreover, the increased densities of the oxide-trap charge projected to the Si/SiO interface and interface-trap charge are calculated. The results of our experiment suggest that the magnitudes of low-frequency noise do not necessarily increase with the increase in border-trap density. A novel physical explanation for the low-frequency noise in SOI-NMOSFETs with high interface-trap density is proposed. We reveal that the presence of high-density interface traps after irradiation has a repressing effect on the generation of low-frequency noise. Furthermore, the exchange of some carriers between border traps and interface traps can cause a decrease in the magnitude of low-frequency noise when the interface-trap density is high.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi14030602