A Multimodal Sensing Device for Simultaneous Measurement of Dissolved Oxygen and Hydrogen Ions by Monolithic Integration of FET-Based Sensors

We examined the possibility of measuring dissolved oxygen by using a potentiometric solid-state semiconductor sensor. Thin films of tin (IV) oxide (SnO2) are widely used in oxygen gas sensors. However, their ability to detect dissolved oxygen (DO) in solutions is still unknown. In this paper, we pre...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2022-09, Vol.22 (17), p.6669
Main Authors: Noda, Toshihiko, Loo, Sylvia Mei Lin, Noda, Yoshiko, Akai, Daisuke, Hizawa, Takeshi, Choi, Yong-Joon, Takahashi, Kazuhiro, Sawada, Kazuaki
Format: Article
Language:English
Subjects:
Adsorption
Chemical vapor deposition
CMOS
Communication
Design
Dissolved oxygen
Electrodes
Field effect transistors
Gas sensors
Gases
Hydrogen
hydrogen ion
Hydrogen ions
Ion implantation
ISFET
Metabolism
Metal oxides
Methods
multimodal sensing
potentiometric sensing
Semiconductor devices
Semiconductors
Sensitivity
Sensors
Silicon nitride
Silicon wafers
solid-state sensor
Taxation
Thin films
Tin dioxide
Transistors
Zinc oxides
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Summary:We examined the possibility of measuring dissolved oxygen by using a potentiometric solid-state semiconductor sensor. Thin films of tin (IV) oxide (SnO2) are widely used in oxygen gas sensors. However, their ability to detect dissolved oxygen (DO) in solutions is still unknown. In this paper, we present a method for investigating the dissolved oxygen-sensing properties of SnO2 thin films in solutions by fabricating a SnO2-gate field-effect transistor (FET). A similarly structured hydrogen ion-sensitive silicon nitride (Si3N4)-gate FET was fabricated using the same method. The transfer characteristics and sensitivities were experimentally obtained and compared. The transfer characteristics of the FET show a shift in threshold voltage in response to a decrease in DO concentration. The SnO2-gate FET exhibited a sensitivity of 4 mV/ppm, whereas the Si3N4-gate FET showed no response to DO. Although the SnO2-gate FET responds to pH changes in the solution, this sensitivity issue can be eliminated by using a Si3N4-gate FET, which is capable of selectively sensing hydrogen ions without DO sensitivity. The experimental results indicate the promising properties of SnO2 thin films for multimodal sensing applications.
ISSN:1424-8220
1424-8220
DOI:10.3390/s22176669