A Comparison Study on Multilayered Barrier Oxide Structure in Charge Trap Flash for Synaptic Operation

A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxid...

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Bibliographic Details
Published in:Crystals (Basel) 2021-01, Vol.11 (1), p.70
Main Authors: Kim, Minkyung, Park, Eunpyo, Kim, In Soo, Park, Jongkil, Kim, Jaewook, Jeong, YeonJoo, Lee, Suyoun, Kim, Inho, Park, Jong-Keuk, Seong, Tae-Yeon, Kwak, Joon Young
Format: Article
Language:English
Subjects:
Aluminum oxide
charge trap flash
Electrodes
Flash memory (computers)
Memory devices
MoS2
multilayered oxide film
Neural networks
neuromorphic
Neurons
Silicon dioxide
Silicon nitride
Symmetry
synaptic device
Weight
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Summary:A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst11010070