A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States

• Published in: IEEE journal of the Electron Devices Society 2024, Vol.12, p.83-87
• Main Authors: Fuchsberger, Andreas, Wind, Lukas, Nazzari, Daniele, Kühberger, Larissa, Popp, Daniel, Aberl, Johannes, Navarrete, Enrique Prado, Brehm, Moritz, Vogl, Lilian, Schweizer, Peter, Lellig, Sebastian, Maeder, Xavier, Sistani, Masiar, Weber, Walter M.
• Format: Article
• Language: English
• Subjects: Aluminum; Energy dissipation; Field effect transistors; Germanides; Germanium; Heterojunctions; Leakage current; Logic circuits; Performance enhancement; reconfigurable field-effect transistor; Reconfiguration; Semiconductor devices; Silicon; symmetric on-state; wired-logic
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2024.3350209

Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices. Thereto, we have monolithically integrated an ultra-thin epitaxial and defect-free Ge layer on a Si on insulator platform. To evade the commonly observed process variability of Ni-germanides, Al-Si-Ge multi-heterojunction contacts have been employed, providing process stability and the required equal injection capabilities for electrons and holes. Integration into a three top-gate transistor enables effective polarity control and efficient leakage current suppression to limit static power dissipation. Exploiting the advantages of multi-gate transistors, combinational wired-AND gates are shown to be capable of extending a single transistor to a logic gate. Notably, the obtained Al-Si-Ge multi-heterojunction reconfigurable transistors constitute the first CMOS compatible platform to combine efficient polarity control enabling the envisioned performance enhancements of Ge based reconfigurable transistors.