Effects of Thermal Annealing on Optical and Microscopic Ferromagnetic Properties in InZnP:Ag Nano-Rods

• Published in: Nanomaterials (Basel, Switzerland) Switzerland), 2022-11, Vol.12 (23), p.4200
• Main Authors: Lee, Juwon, Shon, Yoon, Kwon, Younghae, Kyhm, Ji-Hoon, Kim, Deuk Young, Kang, Joon Hyun, Park, Chang-Soo, Lee, Kyoung Su, Kim, Eun Kyu
• Format: Article
• Language: English
• Subjects: Analysis; Annealing; Diffusion; Excitons; Ferromagnetism; Image contrast; InZnP:Ag nano-rods; Magnetic properties; Nanorods; noble metal; Optical properties; Raman spectra; Raman spectroscopy; Rods; Semiconductors; Silver; Spectrum analysis; Spin coupling; Transmission electron microscopy
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano12234200

InZnP:Ag nano-rods fabricated by the ion milling method were thermally annealed in the 250~350 °C temperature range and investigated the optimum thermal annealing conditions to further understand the mutual correlation between the optical properties and the microscopic magnetic properties. The formation of InZnP:Ag nano-rods was determined from transmission electron microscopy (TEM), total reflectivity and Raman scattering analyses. The downward shifts of peak position for LO and TO modes in the Raman spectrum are indicative of the production of Ag ion-induced strain during the annealing process of the InZnP:Ag nano-rod samples. The appearance of two emission peaks of both (A X) and (e, Ag) in the PL spectrum indicated that acceptor states by Ag diffusion are visible due to the effective incorporation of Ag-creating acceptor states. The binding energy between the acceptor and the exciton measured as a function of temperature was found to be 21.2 meV for the sample annealed at 300 °C. The noticeable MFM image contrast and the clear change in the MFM phase with the scanning distance indicate the formation of the ferromagnetic spin coupling interaction on the surface of InZnP:Ag nano-rods by Ag diffusion. This study suggests that the InZnP:Ag nano-rods should be a potential candidate for the application of spintronic devices.