Mechanism of Current Performance in Thin-Film Heterojunctions n-CdS/p-Sb2Se3 Obtained by the CMBD Method

In this work, we analyzed the temperature dependence of the current-voltage characteristics of the structure of glass/Mo/p-Sb2Se3/n-CdS/In. From an analysis of the temperature dependences of the direct branches of the I-V characteristic of the heterojunction, it was established that the dominant mec...

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Bibliographic Details
Published in:East European journal of physics 2024-12 (4)
Main Authors: Т.М. Разиков, К.М. Кучкаров, А.А. Насіров, М.П. Пірімматов, Р.Р. Хуррамов, Р.Т. Юлдашев, Д.З. Ісаков, М.А. Махмудов, Ш.М. Бобомурадов, К.Ф. Шахрієв
Format: Article
Language:eng ; ukr
Subjects:
CMBO
Heterojunction
Heterostructure
Sb2Se3 SCR
Thin films
Online Access:Get full text
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Summary:In this work, we analyzed the temperature dependence of the current-voltage characteristics of the structure of glass/Mo/p-Sb2Se3/n-CdS/In. From an analysis of the temperature dependences of the direct branches of the I-V characteristic of the heterojunction, it was established that the dominant mechanism of current transfer at low biases (3kT/e
ISSN:2312-4334
2312-4539
DOI:10.26565/2312-4334-2024-4-29