Mechanism of Current Performance in Thin-Film Heterojunctions n-CdS/p-Sb2Se3 Obtained by the CMBD Method

In this work, we analyzed the temperature dependence of the current-voltage characteristics of the structure of glass/Mo/p-Sb2Se3/n-CdS/In. From an analysis of the temperature dependences of the direct branches of the I-V characteristic of the heterojunction, it was established that the dominant mec...

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Published in:East European journal of physics 2024-12 (4)
Main Authors: Т.М. Разиков, К.М. Кучкаров, А.А. Насіров, М.П. Пірімматов, Р.Р. Хуррамов, Р.Т. Юлдашев, Д.З. Ісаков, М.А. Махмудов, Ш.М. Бобомурадов, К.Ф. Шахрієв
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Language:eng ; ukr
Subjects:
CMBO
Heterojunction
Heterostructure
Sb2Se3 SCR
Thin films
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container_title East European journal of physics
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creator Т.М. Разиков
К.М. Кучкаров
А.А. Насіров
М.П. Пірімматов
Р.Р. Хуррамов
Р.Т. Юлдашев
Д.З. Ісаков
М.А. Махмудов
Ш.М. Бобомурадов
К.Ф. Шахрієв
description In this work, we analyzed the temperature dependence of the current-voltage characteristics of the structure of glass/Mo/p-Sb2Se3/n-CdS/In. From an analysis of the temperature dependences of the direct branches of the I-V characteristic of the heterojunction, it was established that the dominant mechanism of current transfer at low biases (3kT/e
doi_str_mv 10.26565/2312-4334-2024-4-29
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subjects CMBO
Heterojunction
Heterostructure
Sb2Se3 SCR
Thin films
title Mechanism of Current Performance in Thin-Film Heterojunctions n-CdS/p-Sb2Se3 Obtained by the CMBD Method
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