Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface...

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Bibliographic Details
Published in:MATEC web of conferences 2018-01, Vol.201, p.2004
Main Authors: Yang, Shao-Ming, Sheu, Gene, Lee, Tzu Chieh, Chien, Ting Yao, Wu, Chieh Chih, Lin, Yun Jung
Format: Article
Language:English
Subjects:
Breakdown
Electronic devices
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Summary:High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm 2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.
ISSN:2261-236X
2274-7214
2261-236X
DOI:10.1051/matecconf/201820102004