Variable Range Hopping Model Based on Gaussian Disordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device

We investigate the carrier concentration dependent Seebeck coefficient in Gaussian disordered organic semiconductors (GD-OSs) for thermoelectric device applications. Based on the variable-range hopping (VRH) theory, a general model predicting the Seebeck effect is developed to reveal the thermoelect...

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Bibliographic Details
Published in:Micromachines (Basel) 2022-04, Vol.13 (5), p.707
Main Authors: Zhao, Ying, Wang, Jiawei
Format: Article
Language:English
Subjects:
Carrier density
Charge transport
Conducting polymers
Conductivity
Energy
Field effect transistors
Heat conductivity
Optimization
Organic semiconductors
Polymer films
Seebeck coefficient
Seebeck effect
Semiconductor devices
Semiconductors
Temperature dependence
thermoelectric device
Thermoelectricity
variable range hopping
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Summary:We investigate the carrier concentration dependent Seebeck coefficient in Gaussian disordered organic semiconductors (GD-OSs) for thermoelectric device applications. Based on the variable-range hopping (VRH) theory, a general model predicting the Seebeck effect is developed to reveal the thermoelectric properties in GD-OSs. The proposed model could interpret the experimental data on carrier concentration- and temperature-dependence of the Seebeck coefficient, including various kinds of conducting polymer film and small molecule based field-effect transistors (FETs). Compared with the conventional Mott's VRH and mobility edge model, our model has a much better description of the relationship between the Seebeck coefficient and conductivity. The model could deepen our insight into charge transport in organic semiconductors and provide instructions for the optimization of thermoelectric device performance in a disordered system.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13050707