High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films

Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy band...

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Bibliographic Details
Published in:Advances in materials science and engineering 2018-01, Vol.2018 (2018), p.1-6
Main Authors: Zheng, Yan, Sun, Yuemei, Zhu, Xiaoqin, You, Haipeng, Hu, Yifeng, Zhang, Dan, Zou, Hua
Format: Article
Language:English
Subjects:
Amorphization
Applied physics
Computer memory
Crystallization
Investigations
Lasers
Magnetron sputtering
Materials science
Multilayers
Nitrogen
Phase change
Phase transitions
Radio frequency
Random access memory
Retention
Silicon dioxide
Silicon substrates
Surface roughness
Thermal stability
Thin films
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Summary:Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10-year data retention, and resistance of Sb70Se30/SiO2 multilayer composite thin films exhibited a higher value, suggesting that Sb70Se30/SiO2 multilayer composite thin films have superior thermal stability. The AFM measurement suggests that the SbSe (1 nm)/SiO (9 nm) multilayer thin films possess a smaller surface roughness (RMS = 0.23 nm). Besides, it was found that the phase-change time of SbSe (1 nm)/SiO (9 nm) multilayer thin films was shorter than that of GST in the process of crystallization and amorphization.
ISSN:1687-8434
1687-8442
DOI:10.1155/2018/9693015