Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals

In the paper, the simulation results on propagation of high-energy charged particles in the bent crystalline (Si and Ge) media have been presented within the atomistic approach. The calculation results were compared with literary experimental data obtained by measuring the output angular distributio...

Full description

Saved in:
Bibliographic Details
Published in:St. Petersburg Polytechnical University Journal. Physics and Mathematics 2023-03, Vol.16 (1)
Main Authors: Haurylavets Viktar, Korol Andrei, Sushko Gennady, Ivanov Vadim, Solov’yov Andrey
Format: Article
Language:English
Subjects:
bent monocrystal
channeling
germanium
radiation when electrons channeling
silicon
ultrarelativistic electron
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In the paper, the simulation results on propagation of high-energy charged particles in the bent crystalline (Si and Ge) media have been presented within the atomistic approach. The calculation results were compared with literary experimental data obtained by measuring the output angular distribution of 855 MeV electrons with their very low initial divergence. Moreover, the literary experimental data on output radiation spectra for short bent Si and Ge crystals with different bending radii were taken into account. A good agreement between all the results was found.
ISSN:2405-7223
DOI:10.18721/JPM.16104