Quantum confinement-induced enhanced nonlinearity and carrier lifetime modulation in two-dimensional tin sulfide

Two-dimensional tin sulfide (SnS), as a black phosphorus-analogue binary semiconductor, has received considerable attention in photonics and optoelectronics. Herein, the third-order nonlinearity susceptibility χ is enhanced from  −(6.88 ± 0.10) × 10 esu to  −(15.90 ± 0.27) × 10 esu by the size-relat...

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Bibliographic Details
Published in:Nanophotonics (Berlin, Germany) Germany), 2020-07, Vol.9 (7), p.1963-1972
Main Authors: Zhang, Feng, Xu, Ning, Zhao, Jinlai, Wang, Yunzheng, Jiang, Xiantao, Zhang, Ye, Huang, Weichun, Hu, Lanping, Tang, Yanfeng, Xu, Shixiang, Zhang, Han
Format: Article
Language:English
Subjects:
carrier dynamics
Carrier lifetime
Collaboration
Electromagnetism
Energy levels
Graphene
Laboratories
Morphology
Nonlinear optics
Nonlinearity
Optics
Optoelectronic devices
Optoelectronics
Physics
Quantum confinement
Quantum dots
Scanning electron microscopy
third-order nonlinearity
tin sulfide (SnS)
two-dimensional
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Summary:Two-dimensional tin sulfide (SnS), as a black phosphorus-analogue binary semiconductor, has received considerable attention in photonics and optoelectronics. Herein, the third-order nonlinearity susceptibility χ is enhanced from  −(6.88 ± 0.10) × 10 esu to  −(15.90 ± 0.27) × 10 esu by the size-related quantum confinement in layered SnS nanosheets. Due to the energy level alignment, a phonon-bottleneck effect is observed, which leads to a prolonged carrier lifetime. These results provide a platform for actively tuning the linear and nonlinear optics, and pave the way for designing SnS-based tunable and anisotropic optoelectronic devices.
ISSN:2192-8606
2192-8614
DOI:10.1515/nanoph-2019-0448