Long-term oxidization and phase transition of InN nanotextures

The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amo...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2011-05, Vol.6 (1), p.387-387, Article 387
Main Authors: Sarantopoulou, Evangelia, Kollia, Zoe, Dražic, Goran, Kobe, Spomenka, Antonakakis, Nicolaos Spyropoulos
Format: Article
Language:English
Subjects:
11th Trends in NanoTechnology International Conference (TNT2010)
Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-O x -N y (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In 2 O 3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-O x -N y oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-O x -N y phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In 2 O 3 phase.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-6-387