High-speed metamagnetic switching of FeRh through Joule heating

Due to its proximity to room temperature and demonstrated high degree of temperature tunability, FeRh’s metamagnetic ordering transition is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. We demonstrate electrical control of the antiferromagnet...

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2022-12, Vol.12 (1), p.22061-22061, Article 22061
Main Authors: Blumenschein, Nicholas A., Stephen, Gregory M., Cress, Cory D., LaGasse, Samuel W., Hanbicki, Aubrey T., Bennett, Steven P., Friedman, Adam L.
Format: Article
Language:English
Subjects:
639/166/987
639/766/1130
639/766/25
Finite element analysis
Heat
Heating
Humanities and Social Sciences
Laboratories
Magnetism
multidisciplinary
Phase transitions
Power consumption
Science
Science (multidisciplinary)
Temperature
Transition temperatures
Wire
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Due to its proximity to room temperature and demonstrated high degree of temperature tunability, FeRh’s metamagnetic ordering transition is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. We demonstrate electrical control of the antiferromagnetic-to-ferromagnetic transition via Joule heating in FeRh wires. The magnetic transition of FeRh is accompanied by a change in resistivity, which can be probed electrically and allows for integration into switching devices. Finite element simulations based on abrupt state transition within each domain result in a globally smooth transition that agrees with the experimental findings and provides insight into the thermodynamics involved. We measure a 150 K decrease in transition temperature with currents up to 60 mA, limited only by the dimensions of the device. The sizeable shift in transition temperature scales with current density and wire length, suggesting the absolute resistance and heat dissipation of the substrate are also important. The FeRh phase change is evaluated by pulsed I-V using a variety of bias conditions. We demonstrate high speed (~ ns) memristor-like behavior and report device performance parameters such as switching speed and power consumption that compare favorably with state-of-the-art phase change memristive technologies.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-022-26587-z