Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiOx Tunnel Junction

Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasiti...

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Bibliographic Details
Published in:Energies (Basel) 2021-11, Vol.14 (22), p.7684
Main Authors: Mercaldo, Lucia V., Bobeico, Eugenia, De Maria, Antonella, Della Noce, Marco, Ferrara, Manuela, La Ferrara, Vera, Lancellotti, Laura, Rametta, Gabriella, Sannino, Gennaro V., Usatii, Iurie, Delli Veneri, Paola
Format: Article
Language:English
Subjects:
Charge transport
Configurations
Design
doped nanocrystalline silicon oxide
Efficiency
Glass substrates
Heterojunctions
Hydrogenation
Infrared radiation
Investigations
Low temperature
monolithic perovskite/silicon tandem solar cells
Nanocrystals
P-n junctions
Perovskites
Photovoltaic cells
Photovoltaics
Recombination
Shunts
Silicon
silicon heterojunction
Solar cells
Solar energy
Thickness
triple cation perovskite
Tunnel junctions
tunnel recombination junction
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Summary:Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasitic p/n junctions. We investigated monolithic perovskite/silicon-heterojunction (SHJ) tandem solar cells with a p/n nanocrystalline silicon/silicon-oxide recombination junction for improved infrared light management. This design can additionally provide for resilience to shunts and simplified cell processing. We probed modified SHJ solar cells, made from double-side polished n-type Si wafers, which included the proposed front-side p/n tunnel junction with the p-type film simultaneously functioning as selective charge transport layer for the SHJ bottom cell, trying different thicknesses for the n-type layer. Full tandem devices were then tested, by applying a planar n-i-p mixed-cation mixed-halide perovskite top cell, fabricated via low temperature solution methods to be compatible with the processed Si wafer. We demonstrate the feasibility of this tandem cell configuration over a 1 cm2 area with negligible J-V hysteresis and a VOC ~1.8 V, matching the sum of the VOC-s contributed by the two components.
ISSN:1996-1073
1996-1073
DOI:10.3390/en14227684