Interplay between strain and charge in Cu(In,Ga)Se2 flexible photovoltaics

• Published in: Npj flexible electronics 2024-09, Vol.8 (1), p.58-8, Article 58
• Main Authors: Park, Ha Kyung, Yim, Kanghoon, Lee, Jiyoon, Cho, Yunae, Jeong, Inyoung, Shin, Donghyeop, Gwak, Jihye, Walsh, Aron, Kim, Kihwan, Jo, William
• Format: Article
• Language: English
• Subjects: 639/301/1034; 639/301/299/946; 639/4077/909; Alkali metals; Bending stresses; Carbon; Chemistry and Materials Science; Copper indium gallium selenides; Crystal defects; Crystal structure; Current carriers; Efficiency; Electronics and Microelectronics; Electrons; Energy; Energy levels; Energy of formation; Free energy; Heat of formation; Instrumentation; Materials Science; Microscopy; Optical and Electronic Materials; Performance degradation; Photovoltaic cells; Polymer Sciences; Solar cells; Strain; Thin films; Zinc oxides
• ISSN: 2397-4621; 2397-4621
• DOI: 10.1038/s41528-024-00347-7

Flexible and lightweight Cu(In,Ga)Se 2 (CIGS) thin-film solar cells are promising for versatile applications, but there is limited understanding of stress-induced changes. In this study, the charge carrier generation and trapping behavior under mechanical stress was investigated using flexible CIGS thin-film solar cells with various alkali treatments. Surface current at the CIGS surface decreased by convex bending, which occurs less with the incorporation of alkali metals. The formation energy of the carrier generating defects increased in convex bending environments clarifying the degradation of the surface current. Moreover, alkali-related defects had lower formation energy than the intrinsic acceptors, mitigating current degradation in mechanical stress condition. The altered defect energy levels were attributed to the deformation of the crystal structure under bending states. This study provides insights into the mitigating of strain-induced charge degradation for enhancing the performance and robustness of flexible CIGS photovoltaic devices.