Transport Mechanism of Enhanced Performance in an Amorphous/Monoclinic Mixed-Phase Ga2O3 Solar-Blind Deep Ultraviolet Photodetector

Recently, as an emerging material, ultrawide bandgap Ga2O3 has been investigated extensively in solar-blind deep-ultraviolet (DUV) photodetectors (PDs). High sensitivity and signal-to-noise ratio of PDs are essential for the detection of solar-blind DUV signals; however, such factors are often not m...

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Bibliographic Details
Published in:Crystals (Basel) 2021-09, Vol.11 (9), p.1111
Main Authors: Liu, Haowen, Li, Honglin, Zhou, Shuren, Zhang, Hong, Fan, Shiqiang, Cui, Yuting, Kong, Chunyang, Ye, Lijuan, Xiong, Yuanqiang, Li, Wanjun
Format: Article
Language:English
Subjects:
Annealing
DFT calculation
Discharge
Ga2O3
Gallium oxides
Ion beams
mixed-phase structure
Molecular beam epitaxy
Noise sensitivity
Performance enhancement
Phase transitions
Photometers
Signal to noise ratio
Solar corona
solar-blind photodetector
Solid phases
Spectrum analysis
Temperature
Thin films
Transmission electron microscopy
transport mechanism
Transport properties
Ultraviolet detectors
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Summary:Recently, as an emerging material, ultrawide bandgap Ga2O3 has been investigated extensively in solar-blind deep-ultraviolet (DUV) photodetectors (PDs). High sensitivity and signal-to-noise ratio of PDs are essential for the detection of solar-blind DUV signals; however, such factors are often not mutually compatible. In the present study, an amorphous/monoclinic homogeneous mixed-phase structure was demonstrated to be significantly beneficial in enhancing the comprehensive performance of Ga2O3 solar-blind DUV PDs, especially with respect to sensitivity and the signal-to-noise ratio. Further experimental and theoretical findings provide insights on the transport mechanism of enhanced performance in the mixed-phase Ga2O3 solar-blind DUV PD. For effectively separating the photogenerated carriers, a type-II band alignment between amorphous and crystalline Ga2O3 can be exploited. Furthermore, the change of the barrier height of the mixed-phase interface also has a significant impact on the transport properties of the mixed-phase Ga2O3 PD. Additionally, the potential applications of mixed-phase Ga2O3 PD in high-voltage corona discharge were explored, and clear and stable corona discharge signals were obtained. The results of the present study may promote understanding of DUV photoelectronic devices with various mixed-phase Ga2O3 materials and provide an efficient approach for promoting comprehensive performance in future solar-blind detection applications.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst11091111