In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements

Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking ( f -Fu) and thiophene‒benzene stacking ( f...

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Published in:Nature communications 2023-10, Vol.14 (1), p.6250-6250, Article 6250
Main Authors: Li, Jinshi, Shen, Pingchuan, Zhuang, Zeyan, Wu, Junqi, Tang, Ben Zhong, Zhao, Zujin
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Language:English
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147/143
639/766/1130/2798
639/925/357/339
Benzene
Channel gating
Computer memory
Electrical junctions
Electrochemistry
Electronics
Humanities and Social Sciences
Hydrocarbons
Interference
Memristors
Molecular electronics
multidisciplinary
Random numbers
Science
Science (multidisciplinary)
Stacking
Stochasticity
Switching
Synapses
Voltage
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description Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking ( f -Fu) and thiophene‒benzene stacking ( f -Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f -Fu exhibits volatile turn-on feature while f -Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f -Fu possesses higher switching probability and faster responsive time, while f -Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f -Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator. Molecular electronics holds promise for building memristor at nanoscales for in-memory computing. Li et al. design tailored foldamers with furan-benzene and thiophene-benzene stacking to achieve voltage triggered quantum interference switching for potential random number generator application.
doi_str_mv 10.1038/s41467-023-42028-5
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subjects 147/143
639/766/1130/2798
639/925/357/339
Benzene
Channel gating
Computer memory
Electrical junctions
Electrochemistry
Electronics
Humanities and Social Sciences
Hydrocarbons
Interference
Memristors
Molecular electronics
multidisciplinary
Random numbers
Science
Science (multidisciplinary)
Stacking
Stochasticity
Switching
Synapses
Voltage
title In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
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