Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility

• Published in: Scientific reports 2022-02, Vol.12 (1), p.2426-2426, Article 2426
• Main Authors: Shirokura, Takanori, Fan, Tuo, Khang, Nguyen Huynh Duy, Kondo, Tsuyoshi, Hai, Pham Nam
• Format: Article
• Language: English
• Subjects: 639/301; 639/925; Electromagnetism; Heavy metals; Humanities and Social Sciences; Melting point; multidisciplinary; Science; Science (multidisciplinary); Thin films
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-022-06325-1

Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle ( θ SH  > 1) is limited to a few chalcogenide TIs with toxic elements and low melting points, making them challenging for device integration during the silicon Back-End-of-Line (BEOL) process. Here, we show that by using a half-Heusler alloy topological semi-metal (HHA-TSM), YPtBi, it is possible to achieve both a giant θ SH up to 4.1 and a high thermal budget up to 600 °C. We demonstrate magnetization switching of a CoPt thin film using the giant spin Hall effect of YPtBi by current densities lower than those of heavy metals by one order of magnitude. Since HHA-TSM includes a group of three-element topological materials with great flexibility, our work opens the door to the third-generation spin Hall materials with both high θ SH and high compatibility with the BEOL process that would be easily adopted by the industry.