Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Cu(InGa)Se2 (CIGS) thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA), by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and...

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Bibliographic Details
Published in:International journal of photoenergy 2013, Vol.2013 (2013), p.1-7
Main Authors: Wen, Dong-Cherng, Chen, Yu-Yao, Huang, Peng-cheng, Hsu, Chun-yao
Format: Article
Language:English
Subjects:
Annealing
ANNEALING PROCESSES
CIGS
COATINGS
Copper
COPPER INDIUM SELENIDE
COPPER SELENIDE
DEPOSITION
FABRICATION
Grains
Photovoltaic cells
Precursors
Solar cells
THIN FILMS
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Summary:Cu(InGa)Se2 (CIGS) thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA), by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2) plane. A Cu-poor precursor with a Cu/(In+Ga) ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/(In+Ga) ratio of 1.15 exhibits an inappropriate second phase (Cu2-xSe) in the absorber. However, the precursor with a Cu/(In+Ga) ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.
ISSN:1110-662X
1687-529X
DOI:10.1155/2013/132105