Realization of the Kohn's Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment

• Published in: Nanomaterials (Basel, Switzerland) Switzerland), 2019-01, Vol.9 (1), p.56
• Main Authors: Sarkisyan, Hayk A, Hayrapetyan, David B, Petrosyan, Lyudvig S, Kazaryan, Eduard M, Sofronov, Anton N, Balagula, Roman M, Firsov, Dmitry A, Vorobjev, Leonid E, Tonkikh, Alexander A
• Format: Article
• Language: English
• Subjects: adiabatic approximation; far-IR absorption; few-particle interaction; Ge/Si; Kohn theorem; quantum dots
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano9010056

This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown.