Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN

• Published in: Results in physics 2020-12, Vol.19, p.103679, Article 103679
• Main Authors: Mazumder, Abdullah Al Mamun, Hasan, Md. Soyaeb, Iskanderani, Ahmed I.M., Islam, Md. Rafiqul, Hasan, Md. Tanvir, Mehedi, Ibrahim Mustafa
• Format: Article
• Language: English
• Subjects: Barrier Height; Contact Resistivity; InGaN; MIGS model; MIS Contact
• ISSN: 2211-3797; 2211-3797
• DOI: 10.1016/j.rinp.2020.103679

•The metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN has been studied in detail for future solar-converter switching applications.•Provide clear insight into the MIS contact for both p- and n-InGaN alloy semiconductors for various contacts’ metal and interfacial layers.•The barrier height in n-In0.20Ga0.80N is found to be more or less 0.427 eV for any scale of Fermi level pinning.•Intuitively illustrates the effect of temperature on the saturation current density and contact resistivity for MIS contact with p- and n-InGaN. This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's formation with doped InGaN is explained by extending the MIS contacts' using the metal-induced gap states (MIGS) model. The J-V characteristics clarify the current transport mechanism through the MIS contact with InGaN semiconductor for different temperatures. We observed less control on the barrier height reduction in the case of n-InGaN through changing the thickness of the interfacial layer. The calculated contact resistivities of MIS contact with p- and n-InGaN show better results than the metal–semiconductor contact counterparts. These findings are highly significant to design and fabricate the InGaN based switching devices for converter applications.