Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

• Published in: Chemosensors 2019-12, Vol.7 (4), p.52
• Main Authors: Myasoedova, Tatiana N., Grigoryev, Mikhail N., Plugotarenko, Nina K., Mikhailova, Tatiana S.
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Carbon; carbon oxide; Chip formation; Chromium; Composite materials; copper oxide; Copper oxides; Deposition; Electrodes; Etching; gas sensor; Gas sensors; Gases; Impurities; Investigations; Magnetron sputtering; methane; Operating temperature; Recovery time; Scanning electron microscopy; Semiconductors; Sensitivity; Sensors; Silicon; Silicon carbide; silicon–carbon film; Surface resistance
• ISSN: 2227-9040; 2227-9040
• DOI: 10.3390/chemosensors7040052

In this study, we designed two types of gas-sensor chips with silicon–carbon film, doped with CuO, as the sensitive layer. The first type of gas-sensor chip consists of an Al2O3 substrate with a conductive chromium sublayer of ~10 nm thickness and 200 Ω/□ surface resistance, deposited by magnetron sputtering. The second type was fabricated via the electrochemical deposition of a silicon–carbon film onto a dielectric substrate with copper electrodes formed by photoelectrochemical etching. The gas sensors are sensitive to the presence of CO and CH4 impurities in the air at operating temperatures above 150 °C, and demonstrated p- (type-1) and n-type (type-2) conductivity. The type-1 gas sensor showed fast response and recovery time but low sensitivity, while the type-2 sensor was characterized by high sensitivity but longer response and recovery time. The silicon–carbon films were characterized by the presence of the hexagonal 6H SiC polytype with the impurities of the rhombohedral 15 R SiC phase. XRD analysis revealed the presence of a CuO phase.