Development of the Effective Reaction Model for Diamond Deposition Simulation within the Continuous Media Approach

Three models for diamond growth process by the chemical vapor deposition of methane are proposed. They differ in the degree of detail of the surface reaction description. The most complete model contains the reactions of deposition, etching and insertion. Gas-dynamic simulations have been performed...

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Bibliographic Details
Published in:EPJ Web of conferences 2019, Vol.224, p.2004
Main Authors: Leshchev, Dmitry V., Gorbachev, Yuriy E.
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Computer simulation
Diamonds
Organic chemistry
Substrates
Surface reactions
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Summary:Three models for diamond growth process by the chemical vapor deposition of methane are proposed. They differ in the degree of detail of the surface reaction description. The most complete model contains the reactions of deposition, etching and insertion. Gas-dynamic simulations have been performed for all those models. The species delivery to the substrate and the contribution from different species to the growth process is analysed. It is shown that different surface reaction models lead to different profiles of the species concentrations in the immediate vicinity of the substrate, thus, the experimental data on the growth rate may give information on the growth mechanism.
ISSN:2100-014X
2101-6275
2100-014X
DOI:10.1051/epjconf/201922402004