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Ion rectification based on gel polymer electrolyte ionic diode

Biological ion channels rely on ions as charge carriers and unidirectional ion flow to produce and transmit signals. To realize artificial biological inspired circuitry and seamless human-machine communication, ion-transport-based rectification devices should be developed. In this research, poly(met...

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Bibliographic Details
Published in:Nature communications 2022-11, Vol.13 (1), p.6669-6669, Article 6669
Main Authors: Jiang, Fan, Poh, Wei Church, Chen, Juntong, Gao, Dace, Jiang, Feng, Guo, Xiaoyu, Chen, Jian, Lee, Pooi See
Format: Article
Language:English
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Summary:Biological ion channels rely on ions as charge carriers and unidirectional ion flow to produce and transmit signals. To realize artificial biological inspired circuitry and seamless human-machine communication, ion-transport-based rectification devices should be developed. In this research, poly(methyl methacrylate) (PMMA) and poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) gel polymer electrolytes (GPEs) are assembled to construct a novel ionic diode, enabling ion rectification through ion-diffusion/migration that emulates biological systems. This ion rectification results from the different diffusion/migration behaviors of mobile ions transporting in the GPE heterojunction. The electrical tests of the GPE heterojunction reveal outstanding rectifying ratio of 23.11. The GPE ionic diode operates in wide temperature window, from −20 °C (anti-freezing) to 125 °C (thermal tolerance). The absence of redox reactions is verified in the cyclic voltammogram. The GPE ionic diodes are used to construct ionic logic gates for signal communication. Furthermore, rectification of a triboelectric nanogenerator and potential for synaptic devices are demonstrated. Designing efficient biological inspired devices and circuits remains a challenge. Here, the authors develop ionic diodes based on gel polymer electrolytes enabling ion rectification through different diffusion and migration of mobile ions for logic gates, nanogenerator and synaptic devices.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-022-34429-9