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Room temperature valley polarization via spin selective charge transfer

The two degenerate valleys in transition metal dichalcogenides can be used to store and process information for quantum information science and technology. A major challenge is maintaining valley polarization at room temperature where phonon-induced intervalley scattering is prominent. Here we demon...

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Published in:Nature communications 2023-08, Vol.14 (1), p.5234-5234, Article 5234
Main Authors: Shrestha, Shreetu, Li, Mingxing, Park, Suji, Tong, Xiao, DiMarzio, Donald, Cotlet, Mircea
Format: Article
Language:English
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Summary:The two degenerate valleys in transition metal dichalcogenides can be used to store and process information for quantum information science and technology. A major challenge is maintaining valley polarization at room temperature where phonon-induced intervalley scattering is prominent. Here we demonstrate room temperature valley polarization in heterostructures of monolayer MoS 2 and naphthylethylammine based one-dimensional chiral lead halide perovskite. By optically exciting the heterostructures with linearly polarized light close to resonance and measuring the helicity resolved photoluminescence, we obtain a degree of polarization of up to −7% and 8% in MoS 2 /right-handed (R-(+)-) and left-handed (S-(-)-) 1-(1-naphthyl)ethylammonium lead iodide perovskite, respectively. We attribute this to spin selective charge transfer from MoS 2 to the chiral perovskites, where the perovskites act as a spin filter due to their chiral nature. Our study provides a simple, yet robust route to obtain room temperature valley polarization, paving the way for practical valleytronics devices. Valleytronics is a portmanteau of ‘valley’ and ‘electronics’ and refers to the use of the valley degree of freedom, present in some materials, for encoding and processing information. Here, Shrestha et al demonstrate a room temperature valley polarization in heterostructures composed of molybdenum disulfide and a chiral lead halide perovskite, an important step in development of valleytronics.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-023-40967-7