Excellent field emission properties of vertically oriented CuO nanowire films

• Published in: AIP advances 2018-04, Vol.8 (4), p.045109-045109-8
• Main Authors: Feng, Long, Yan, Hui, Li, Heng, Zhang, Rukang, Li, Zhe, Chi, Rui, Yang, Shuaiyu, Ma, Yaya, Fu, Bin, Liu, Jiwen
• Format: Article
• Language: English
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.5022320

Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE) properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge), indicating that the samples are promising candidates for field emission applications.