Electron-hole asymmetry in the phase diagram of carrier-tuned CsV3Sb5

In this work, we study the effect of electron doping on the kagome superconductor CsV 3 Sb 5 . Single crystals and powders of CsV 3 Sb 5− x Te x are synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight...

Full description

Saved in:
Bibliographic Details
Published in:Frontiers in Electronic Materials 2023-10, Vol.3
Main Authors: Capa Salinas, Andrea N., Ortiz, Brenden R., Bales, Calvin, Frassineti, Jonathan, Mitrović, Vesna F., Wilson, Stephen D.
Format: Article
Language:English
Subjects:
carrier doping
charge density waves
kagome lattice
superconductivity
topological metal
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we study the effect of electron doping on the kagome superconductor CsV 3 Sb 5 . Single crystals and powders of CsV 3 Sb 5− x Te x are synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight suppression of the charge density wave transition temperature and superconducting temperature with the introduction of electron dopants. In contrast to hole doping, both transitions survive relatively unperturbed up to the solubility limit of Te within the lattice. A comparison is presented between the electronic phase diagrams of electron- and hole-tuned CsV 3 Sb 5 .
ISSN:2673-9895
2673-9895
DOI:10.3389/femat.2023.1257490