28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries. The fabricated devices demonstrate 103 WRITE-endurance cyc...

Full description

Saved in:
Bibliographic Details
Published in:Memories - Materials, Devices, Circuits and Systems Devices, Circuits and Systems, 2023-07, Vol.4, p.100048, Article 100048
Main Authors: Raffel, Yannick, Müller, Franz, Thunder, Sunanda, Sk, Masud Rana, Lederer, Maximilian, Pirro, Luca, Beyer, Sven, Seidel, Konrad, Chakrabarti, Bhaswar, Kämpfe, Thomas, De, Sourav
Format: Article
Language:English
Subjects:
28 nm-HKMG
Artificial synapse
FeFET
Ferroelectric memory
Hafnium oxide
HfO2
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries. The fabricated devices demonstrate 103 WRITE-endurance cycles and 104 seconds of data-retention capability at 85 °C. We have also assessed the FeFET-based crossbar array’s performance in system-level applications. The system performance was assessed by simulating the FeFET crossbar array for neuromorphic applications. For datasets from the National Institute of Standards and Technology (MNIST), the crossbar array achieved software-comparable inference accuracy of about 97% using multilayer perceptron (MLP) neural networks.
ISSN:2773-0646
2773-0646
DOI:10.1016/j.memori.2023.100048