Optimization of a LaNiO3 Bottom Electrode for Flexible Pb(Zr,Ti)O3 Film-Based Ferroelectric Random Access Memory Applications

The direct growth of ferroelectric films onto flexible substrates has garnered significant interest in the advancement of portable and wearable electronic devices. However, the search for an optimized bottom electrode that can provide a large and stable remnant polarization is still ongoing. In this...

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Bibliographic Details
Published in:Crystals (Basel) 2023-12, Vol.13 (12), p.1613
Main Authors: Choi, Yeong Uk, Ahn, Hyun Soo, Hong, Jung Ehy, Yang, Dong In, Lee, Hwa-Pyeong, Jeong, Dae-Yong, Lee, Minbaek, Kim, Jong Hun, Jung, Jong Hoon
Format: Article
Language:English
Subjects:
Annealing
Crystallization
Electric fields
Electrical resistivity
Electrode polarization
Electrodes
Ferroelectric materials
Ferroelectricity
Film thickness
flexible ferroelectric random access memory
Fluorophlogopite
fluorophlogopite mica substrate
LaNiO3 bottom electrode
Lanthanum oxides
Lead zirconate titanates
Mica
Microscopy
Nitrates
Optimization
Pb(Zr0.52Ti0.48)O3 thick film
Portable equipment
Random access memory
Sol-gel processes
Solvents
Substrates
Temperature
Thermogravimetric analysis
Thick films
Zirconium
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Summary:The direct growth of ferroelectric films onto flexible substrates has garnered significant interest in the advancement of portable and wearable electronic devices. However, the search for an optimized bottom electrode that can provide a large and stable remnant polarization is still ongoing. In this study, we report the optimization of an oxide-based LaNiO3 (LNO) electrode for high-quality Pb(Zr0.52Ti0.48)O3 (PZT) thick films. The surface morphology and electrical conductivity of sol-gel-grown LNO films on a fluorophlogopite mica (F-mica) substrate were optimized at a crystallization temperature of 800 °C and a film thickness of 120 nm. Our approach represents the promising potential pairing between PZT and LNO electrodes. While LNO-coated F-mica maintains stable electrical conductivity during 1.0%-strain and 104-bending cycles, the upper PZT films exhibit a nearly square-like polarization–electric field behavior under those stress conditions. After 104 cycles at 0.5% strain, the remnant polarization shows decreases as small as ~14%. Under flat (bent) conditions, the value decreases to just 81% (49%) after 1010 fatigue cycles and to 96% (85%) after 105 s of a retention test, respectively.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst13121613