Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

• Published in: ACS omega 2019-01, Vol.4 (1), p.2256-2260
• Main Authors: Giambra, Marco A, Benfante, Antonio, Pernice, Riccardo, Miseikis, Vaidotas, Fabbri, Filippo, Reitz, Christian, Pernice, Wolfram H. P, Krupke, Ralph, Calandra, Enrico, Stivala, Salvatore, Busacca, Alessandro C, Danneau, Romain
• Format: Article
• Language: English
• ISSN: 2470-1343; 2470-1343
• DOI: 10.1021/acsomega.8b02836

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al2O3), titanium oxide (TiO2), and hafnium oxide (HfO2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.