Two-Dimensional Linear Elasticity Equations of Thermo-Piezoelectric Semiconductor Thin-Film Devices and Their Application in Static Characteristic Analysis

Based on the three-dimensional (3D) linear elasticity theory of piezoelectric semiconductor (PS) structures, inspired by the variational principle and the Mindlin plate theory, a two-dimensional (2D) higher-order theory and equations for thin-film devices are established for a rectangular coordinate...

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Bibliographic Details
Published in:Applied sciences 2024-08, Vol.14 (15), p.6509
Main Authors: He, Hongyi, Zhang, Minjie, Wang, Wenjun, Li, Xudong, Li, Miaomiao, Zhao, Luke
Format: Article
Language:English
Subjects:
2D equations
active manipulation
Deformation
Dielectric films
Electric fields
electromechanical fields
Electrons
Interdisciplinary aspects
Investigations
Mechanics
mobile charges
R&D
Research & development
Semiconductors
Thin films
thin-film devices
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Summary:Based on the three-dimensional (3D) linear elasticity theory of piezoelectric semiconductor (PS) structures, inspired by the variational principle and the Mindlin plate theory, a two-dimensional (2D) higher-order theory and equations for thin-film devices are established for a rectangular coordinate system, in which Newton’s law (i.e., stress equation of motion), Gauss’s law (i.e., charge equation of electrostatics), Continuity equations (i.e., conservation of charge for holes and electrons), drift–diffusion theory for currents in semiconductors, and unavoidable thermo-deformation-polarization-carrier coupling response in external stimulus field environment are all considered. As a typical application of these equations, the static characteristic analysis of electromechanical fields for the extensional deformation of a PS thin-film device with thermal field excitations is carried out by utilizing established zeroth-order equations and the double trigonometric series solution method. It is revealed that the extensional deformations, electric potential, electron and hole concentration perturbations, and their current densities can be controlled actively via artificially tuning thermal fields of external stimuli. Especially, a higher temperature rise can induce a deeper potential well and a higher potential barrier, which can play a vital role in driving effectively motions and redistributions of electrons and holes. Overall, the derived 2D equations as well as the quantitative results provide us some useful guidelines for investigating the thermal regulation behavior of PS thin-film devices.
ISSN:2076-3417
2076-3417
DOI:10.3390/app14156509