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Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulate...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-09, Vol.11 (10), p.2549
Main Authors: Neplokh, Vladimir, Fedorov, Vladimir, Mozharov, Alexey, Kochetkov, Fedor, Shugurov, Konstantin, Moiseev, Eduard, Amador-Mendez, Nuño, Statsenko, Tatiana, Morozova, Sofia, Krasnikov, Dmitry, Nasibulin, Albert G., Islamova, Regina, Cirlin, George, Tchernycheva, Maria, Mukhin, Ivan
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Language:English
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Summary:We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11102549