High-Performance Silicon 2 × 2 Thermo-Optic Switch for the 2-$\mu$m Wavelength Band

The 2-μm spectral window is emerging as a promising candidate for the next generation communication. We present a 2 × 2 Mach-Zehnder interferometric thermo-optic switch at 2-μm waveband. The device is fabricated on a 220 nm thick silicon-on-insulator wafer with standard complementary metal oxide sem...

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Bibliographic Details
Published in:IEEE photonics journal 2019-08, Vol.11 (4), p.1-6
Main Authors: Shen, Li, Huang, Meng, Zheng, Shuang, Yang, Lesi, Peng, Xiangfeng, Cao, Xiaoping, Li, Shuhui, Wang, Jian
Format: Article
Language:English
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2-<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m spectral window
Optical interconnects
silicon photonics
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Summary:The 2-μm spectral window is emerging as a promising candidate for the next generation communication. We present a 2 × 2 Mach-Zehnder interferometric thermo-optic switch at 2-μm waveband. The device is fabricated on a 220 nm thick silicon-on-insulator wafer with standard complementary metal oxide semiconductor (CMOS) process. We demonstrate an over 30 dB extinction ratio under the power consumption of 32.3 mW, with an average switching time of ~15 μs. This proof of principle optical switch paves a way toward full silicon-based chip-scale interconnects in the 2-μm waveband.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2019.2921923