Monitoring of FinFET Characteristics Using \Delta V}/(I}/I}) and \Delta V}/(I}/I})

In this paper, we present a descriptive analysis of a performance index, ΔV DIBLSS /(I on /I off ), used for performance monitoring. Scaled nand p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) (planar and FinFET devices) are included for comparison of performance trends. Also,...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2019, Vol.7, p.344-350
Main Authors: Eng, Yi-Chuen, Wang, Ted, Tseng, Touber, Yang, Chih-Wei, Hsieh, Chin-Yang, Hu, Luke, Chang, Tzu-Feng, Wang, Chih-Yi, Hsu, Steven, Cheng, Osbert, Lin, Chien-Ting, Lin, Yu-Shiang, Tsai, Zen-Jay
Format: Article
Language:English
Subjects:
DeltaVDIBL/(Ion/Ioff)
DeltaVDIBLSS/(Ion/Ioff)
FinFETs
intrinsic gain
Logic gates
Performance evaluation
performance metrics
scaled MOSFETs
Semiconductor device measurement
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Summary:In this paper, we present a descriptive analysis of a performance index, ΔV DIBLSS /(I on /I off ), used for performance monitoring. Scaled nand p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) (planar and FinFET devices) are included for comparison of performance trends. Also, the simplified ΔV DIBL /(I on /I off ) for monitoring the electrical characteristics of MOSFET devices is proposed due to the "quick measurements" required in the last step of the semiconductor manufacturing process. ΔV DIBL /(I on /I off ) only accounts for drain-induced barrier lowering in its numerator and on/off current ratio in its denominator. The calculation process for ΔV DIBL /(I on /I off ) is much quicker than for ΔV DIBLSS /(I on /I off ), where we need to make an extra measurement of the value of the subthreshold swing. Performance metrics, such as Ion/Ioff and intrinsic gain, gm × ro, are reported using ΔV DIBLSS /(I on /I off ) and ΔV DIBL /(I on /I off ). ΔV DIBLSS of about 100 mV in scaled MOSFETs is required to ensure that the gate control is strong. Since I on /I off is a sensitive function of threshold voltage, the estimates of the ΔV DIBLSS /(I on /I off ) and ΔV DIBL /(I on /I off ) are therefore dependent on the design of threshold voltage. In planar MOSFETs, small values of ΔV DIBLSS /(I on /I off ) and ΔV DIBL /(I on /I off ) are hard to achieve. However, in FinFETs, it is easy to achieve the performance requirements due to its tri-gate structure.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2019.2898697