Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two model...

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Bibliographic Details
Published in:Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2021-01, Vol.24 (suppl 1), p.1
Main Authors: Ramos, R., Chaves, M., Martins, E., Durrant, Steven F., Rangel, E.C., Silva, T.F. da, Bortoleto, J.R.R.
Format: Article
Language:English
Subjects:
Al thin films
Argon plasma
Carrier density
Electrical properties
ENGINEERING, CHEMICAL
Film growth
Grain boundaries
Homology
Impurities
Magnetron sputtering
MATERIALS SCIENCE, MULTIDISCIPLINARY
METALLURGY & METALLURGICAL ENGINEERING
morphological properties
Optical properties
Plasmas (physics)
Room temperature
TCO
Thin films
ZnO
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Summary:Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.
ISSN:1516-1439
1980-5373
1980-5373
DOI:10.1590/1980-5373-mr-2021-0052