Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, ch...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2018-08, Vol.18 (9), p.2800
Main Authors: Liu, Jheng-Jie, Ho, Wen-Jeng, Chiang, Cho-Chun, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu
Format: Article
Language:English
Subjects:
Avalanche diodes
avalanche photodetector (APD)
charge and multiplication (SAGCM)
Chemical vapor deposition
Dark current
Electric fields
Electric potential
Evaluation
eye diagram
grading
modulation frequency
Multiplication
Multiplication & division
multiplication gain
Optical receivers
Organic chemicals
Photometers
Photonics
separate absorption
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Summary:This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16⁻17 V, whereas the breakdown voltage (V ) was controlled to within 28⁻29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 V at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f ) and f values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 V using pseudorandom non-return to zero codes with a length of 2 -1 at 10⁻12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.
ISSN:1424-8220
1424-8220
DOI:10.3390/s18092800