High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation

The demand for a high-resolution metal-oxide-semiconductor (CMOS) image sensor has increased in recent years, and pixel size has shrunk below 1.0 μm to allow accumulation of numerous pixels in a limited area. However, shrinking the pixel size lowers the sensitivity and increases crosstalk because th...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2019-10, Vol.19 (21), p.4653
Main Authors: Kim, Yongnam, Kim, Yunkyung
Format: Article
Language:English
Subjects:
Cameras
CMOS
cmos image sensor
Crosstalk
Light
Pixels
quad-wrgb
Sensitivity
Sensors
Silicon
spatial-dti
Tungsten
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Summary:The demand for a high-resolution metal-oxide-semiconductor (CMOS) image sensor has increased in recent years, and pixel size has shrunk below 1.0 μm to allow accumulation of numerous pixels in a limited area. However, shrinking the pixel size lowers the sensitivity and increases crosstalk because the aspect ratio is worsened by maintaining the height of the pixel. This work introduces a high-sensitivity pixel with a quad-WRGB (White, Red, Green, Blue) color filter array (CFA), spatial deep-trench isolation (S-DTI), and a spatial tungsten grid (S-WG). The optical performance of the suggested pixel was analyzed by performing 3D optical simulations at 1.0, 0.9, and 0.8 μm pixel pitches as small-sized pixels. The quad-WRGB CFA is compared with the quad-Bayer CFA, and the S-DTI and S-WG are compared with the conventional DTI and WG. We confirmed an improvement in the sensitivity of the suggested pixel using the quad-WRGB CFA with S-DTI and S-WG to a maximum of 58.2%, 67.0%, and 66.3% for 1.0, 0.9, and 0.8 μm pixels, respectively.
ISSN:1424-8220
1424-8220
DOI:10.3390/s19214653