Properties of atmospheric pressure plasma oxidized layers on silicon wafers

In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasm...

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Bibliographic Details
Published in:Open Chemistry 2015-01, Vol.13 (1)
Main Authors: Skácelová, Dana, Sládek, Petr, Sťahel, Pavel, Pawera, Lukáš, Haničinec, Martin, Meichsner, Jürgen, Černák, Mirko
Format: Article
Language:English
Subjects:
Amorphous silicon oxide
atmospheric pressure plasma
DCSBD
oxidation
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Summary:In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
ISSN:2391-5420
2391-5420
DOI:10.1515/chem-2015-0047