Insights into structural defect formation in individual InP/ZnSe/ZnS quantum dots under UV oxidation

InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing QD-organic light-emitting diodes (QLED), but low emission efficiency due to their susceptibility to oxidation impedes applications. Structural defects play important roles in the emission efficiency degradation of QDs, but t...

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Bibliographic Details
Published in:Nature communications 2024-02, Vol.15 (1), p.1671-1671, Article 1671
Main Authors: Baek, Hayeon, Kang, Sungsu, Heo, Junyoung, Choi, Soonmi, Kim, Ran, Kim, Kihyun, Ahn, Nari, Yoon, Yeo-Geon, Lee, Taekjoon, Chang, Jae Bok, Lee, Kyung Sig, Park, Young-Gil, Park, Jungwon
Format: Article
Language:English
Subjects:
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147/137
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639/301/930/12
Defects
Efficiency
Emission
Emissions
Humanities and Social Sciences
Light emitting diodes
multidisciplinary
Organic light emitting diodes
Oxidation
Photooxidation
Quantum dots
Science
Science (multidisciplinary)
Transmission electron microscopy
Zinc selenide
Zinc sulfide
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Summary:InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing QD-organic light-emitting diodes (QLED), but low emission efficiency due to their susceptibility to oxidation impedes applications. Structural defects play important roles in the emission efficiency degradation of QDs, but the formation mechanism of defects in oxidized QDs has been less investigated. Here, we investigated the impact of diverse structural defects formation on individual QDs and propagation during UV-facilitated oxidation using high-resolution (scanning) transmission electron microscopy. UV-facilitated oxidation of the QDs alters shell morphology by the formation of surface oxides, leaving ZnSe surfaces poorly passivated. Further oxidation leads to the formation of structural defects, such as dislocations, and induces strain at the oxide-QD interfaces, facilitating In diffusion from the QD core. These changes in the QD structures result in emission quenching. This study provides insight into the formation of structural defects through photo-oxidation, and their effects on emission properties of QDs. InP/ZnSe/ZnS quantum dots (QDs) are promising candidates for advanced light-emitting diodes, but low emission efficiency due to oxidation hampers applications. Here, the authors provide insight into the structural defects that form on individual QDs during UV-facilitated oxidation.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-024-45944-2